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| AG302-63 InGaP HBT Gain Block Product Information Product Features * * * * * * * DC - 4000 MHz +13.5 dBm P1dB at 900 MHz +26.5 dBm OIP3 at 900 MHz 15.5 dB Gain at 900 MHz Single Voltage Supply Green SOT-363 SMT Pkg. Internally matched to 50 Product Description The AG302-63 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 900 MHz, the AG302-63 typically provides 15.5 dB gain, +26.5 dBm OIP3, and +13.5 dBm P1dB. The device combines dependable performance with consistent quality to maintain MTTF values exceeding 100 years at mounting temperatures of +85 C and is housed in a leadfree/green/RoHS-compliant SOT-363 industry standard SMT package. The AG302-63 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT technology process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AG302-63 will work for other various applications within the DC to 4 GHz frequency range such as CATV and fixed wireless. Functional Diagram GND 1 6 RF OUT GND 2 5 GND RF IN 3 4 GND Applications * * * * * * Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless Function Input Output/Bias Ground Pin No. 3 6 1, 2, 4, 5 Specifications (1) Parameter Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output IP3 (2) Output IP2 Output P1dB Noise Figure Test Frequency Gain Output IP3 (2) Output P1dB Device Voltage Device Current Typical Performance (1) Units MHz MHz dB dB dB dBm dBm dBm dB MHz dB dBm dBm V mA Min DC Typ 900 15.6 18 18 +26.4 +37 +13.4 3.4 1900 14.5 +24.8 +12.2 4.23 35 Max 6000 Parameter Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure Units MHz dB dB dB dBm dBm dB 500 15.9 -18 -20 +13.2 +26.6 3.3 Typical 900 15.6 -18 -18 +13.4 +26.4 3.4 1900 14.5 -18 -18 +12.2 +24.8 3.6 2140 14.2 -18 -15 +11.7 +24.3 3.6 13.5 15.5 1. Test conditions: . T = 25 C, Supply Voltage = +5 V, Rbias = 22.1 , 50 System. 2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature DC Voltage RF Input Power (continuous) Junction Temperature Rating -40 to +85 C -55 to +125 C +4.5 V +10 dBm +250 C Ordering Information Part No. AG302-63* AG302-63G AG302-63PCB Description InGaP HBT Gain Block (lead-tin SOT-363 Pkg) InGaP HBT Gain Block (lead-free/green/RoHS-compliant SOT-363 Pkg) 700 - 2400 MHz Fully Assembled Eval. Board Operation of this device above any of these parameters may cause permanent damage. * This package is being phased out in favor of the green package type which is backwards compatible for existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 1 of 6 July 2005 AG302-63 InGaP HBT Gain Block Product Information Typical Device RF Performance Supply Bias = +5 V, Rbias = 22.1 , Icc = 35 mA Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure MHz dB dB dB dBm dBm dB 100 16.0 -18 -20 +13.5 +26.6 3.3 500 15.9 -18 -20 +13.2 +26.6 3.3 900 15.6 -18 -18 +13.4 +26.4 3.4 1900 14.5 -18 -18 +12.2 +24.8 3.6 2140 14.2 -18 -15 +11.7 +24.3 3.6 2400 13.9 -18 -15 +11.6 +23.9 3.7 3500 12.5 -15 -14 +9.5 5800 9.2 -11 -8 1. Test conditions: T = 25 C, Supply Voltage = +5 V, Device Voltage = 4.23 V, Rbias = 22.1 , Icc = 35 mA typical, 50 System. 2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. Gain vs. Frequency 16 14 Return Loss 0 Device Current (mA) I-V Curve 60 50 40 30 20 10 0 3.0 3.5 4.0 4.5 Optimal operating point 12 10 8 -40 C 6 0 1 2 Frequency (GHz) 3 4 +25 C +85 C S11, S22 (dB) -10 -20 -30 S11 S22 Gain (dB) -40 0 1 2 3 4 5 6 Frequency (GHz) Output IP2 vs. Frequency Device Voltage (V) Output IP3 vs. Frequency Noise Figure vs. Frequency 30 25 20 15 -40 C +25 C +85 C 40 35 NF (dB) 5 4 3 2 1 0 -40 C +25 C +85 C OIP3 (dBm) OIP2 (dBm) 30 25 -40c +25c +85c 10 20 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) P1dB vs. Frequency Frequency (MHz) Output Power / Gain vs. Input Power 16 14 Gain (dB) frequency = 900 MHz Frequency (GHz) Output Power / Gain vs. Input Power 16 Output Power (dBm) frequency = 2000 MHz 20 15 10 5 -40 C +25 C +85 C 14 12 Gain (dB) 16 Output Power (dBm) P1dB (dBm) Gain 12 8 4 Output Power 0 -4 Gain 12 8 4 0 Output Power -4 12 10 8 10 8 6 4 -20 -16 -12 -8 -4 Input Power (dBm) 0 4 0 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 6 -20 -16 -12 -8 -4 Input Power (dBm) 0 4 Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 2 of 6 July 2005 AG302-63 InGaP HBT Gain Block Product Information Typical Device RF Performance (cont'd) Supply Bias = +6 V, Rbias = 51 , Icc = 35 mA Gain vs. Frequency 16 14 OIP3 (dBm) Gain (dB) Output IP3 vs. Frequency 30 25 20 15 Output IP2 vs. Frequency 40 35 30 25 -40c +25c +85c 12 10 8 6 0 -40 C 1 +25 C +85 C 3 4 -40 C +25 C +85 C 10 OIP2 (dBm) 20 2 Frequency (GHz) 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 Frequency (GHz) P1dB vs. Frequency Frequency (MHz) Noise Figure vs. Frequency 20 15 NF (dB) 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -40 C +25 C +85 C P1dB (dBm) 10 5 -40 C +25 C +85 C 0 Frequency (GHz) 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) Typical Device RF Performance Supply Bias = +8 V, Rbias = 108 , Icc = 35 mA Gain vs. Frequency 16 14 Output IP3 vs. Frequency Output IP2 vs. Frequency 30 25 20 15 -40 C 0 1 +25 C +85 C 3 4 -40 C +25 C +85 C 40 35 30 25 -40c +25c +85c OIP3 (dBm) 12 10 8 6 10 OIP2 (dBm) Gain (dB) 20 2 Frequency (GHz) 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 Frequency (GHz) P1dB vs. Frequency Frequency (MHz) Noise Figure vs. Frequency 20 15 NF (dB) 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -40 C +25 C +85 C P1dB (dBm) 10 5 -40 C +25 C +85 C 0 Frequency (GHz) 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 3 of 6 July 2005 AG302-63 InGaP HBT Gain Block Product Information Vcc Icc = 35 mA Application Circuit R1 Bias Resistor C4 Bypass Capacitor C3 0.018 F L1 RF Choke RF IN AG302-63 C1 Blocking Capacitor C2 Blocking Capacitor RF OUT Recommended Component Values Reference Designator 50 500 L1 820 nH 220 nH C1, C2, C4 .018 F 1000 pF Ref. Desig. L1 C1, C2 C3 C4 R1 Frequency (MHz) 900 1900 2200 68 nH 27 nH 22 nH 100 pF 68 pF 68 pF Size 0603 0603 0603 0805 2500 18 nH 56 pF 3500 15 nH 39 pF 1. The proper values for the components are dependent upon the intended frequency of operation. 2. The following values are contained on the evaluation board to achieve optimal broadband performance: Value / Type 39 nH wirewound inductor 56 pF chip capacitor 0.018 F chip capacitor Do Not Place 22.1 1% tolerance Recommended Bias Resistor Values S upply R1 value S ize Voltage 5V 22.1 ohms 0603 6V 51 ohms 0805 7V 80 ohms 1206 8V 108 ohms 1210 9V 137 ohms 1210 10 V 166 ohms 1210 12 V 223 ohms 2010 The proper value for R1 is dependent upon the supply voltage and allows for bias stability over temperature. WJ recommends a minimum supply bias of +5 V. A 1% tolerance resistor is recommended. Typical Device Data Freq (MHz) 50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000 4250 4500 4750 5000 5250 5500 5750 6000 S-Parameters (Vdevice = +4.23 V, ICC = 35 mA, T = 25C, calibrated to device leads) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) -19.85 -177.05 15.79 177.89 -19.50 1.85 -22.57 -19.98 175.72 15.72 170.42 -19.97 1.77 -22.62 -18.01 168.09 15.61 160.75 -19.89 -1.49 -25.70 -18.03 161.31 15.46 151.46 -19.75 -0.83 -23.67 -18.40 155.28 15.23 142.64 -20.03 -5.40 -21.92 -18.41 151.47 15.04 133.43 -19.57 -3.15 -20.29 -18.66 151.02 14.72 124.92 -19.70 -3.55 -19.00 -19.00 148.77 14.42 116.42 -19.61 -2.45 -17.99 -19.53 143.58 14.09 108.45 -19.21 -4.88 -17.12 -20.76 113.17 13.77 100.67 -19.05 -5.29 -15.05 -20.87 111.03 13.52 95.18 -19.25 -9.57 -15.35 -19.68 123.77 13.23 87.31 -18.88 -8.74 -15.64 -19.28 129.86 12.90 79.66 -18.52 -7.78 -15.96 -17.79 131.49 12.55 72.44 -18.46 -10.45 -15.54 -15.90 129.32 12.20 64.86 -18.38 -12.94 -14.38 -14.24 123.22 11.76 57.50 -18.15 -16.94 -12.52 -12.67 119.37 11.34 49.91 -17.95 -17.17 -10.93 -11.41 115.92 10.89 43.03 -17.83 -21.16 -9.42 -10.59 112.56 10.41 36.71 -17.67 -22.91 -8.57 -10.10 109.83 9.99 30.18 -17.43 -25.99 -7.86 -9.85 106.48 9.64 24.37 -17.45 -26.81 -7.45 -10.24 105.44 9.33 19.39 -17.45 -29.65 -7.63 -10.79 104.94 9.06 14.78 -16.94 -30.74 -7.77 -11.50 106.52 8.93 9.92 -16.70 -31.15 -8.37 -12.41 105.88 8.77 4.74 -16.46 -33.40 -9.03 Device S-parameters are available for download on the website at: http://www.wj.com Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 4 of 6 July 2005 S22 (ang) -9.39 -20.70 -57.42 -81.31 -97.33 -113.22 -123.83 -133.36 -142.08 -130.60 -142.08 -156.85 -175.61 163.89 142.50 126.50 117.72 109.93 104.82 102.35 102.33 102.18 103.04 104.38 103.86 AG302-63 InGaP HBT Gain Block Product Information AG302-63 (SOT-363 Package) Mechanical Information This package may contain lead-bearing materials. The plating material on the leads is SnPb . Outline Drawing Product Marking The component will be marked with a "D" designator followed by a two-digit numeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the "Application Notes" section. MSL / ESD Rating ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 0 Passes at 150 V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class II Passes at 250 V Charged Device Model (CDM) JEDEC Standard JESD22-C101 Land Pattern MSL Rating: Level 1 Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Thermal Specifications Parameter Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2) -40 to +85C 325 C/W 133 C MTTF (million hrs) Rating 10000 1000 100 10 1 60 MTTF vs. GND Lead Temperature 1. The thermal resistance is referenced from the hottest part of the junction to the ground pin (pin 4). 2. This corresponds to the typical biasing condition of +4.23V, 35 mA at an 85C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 177 C. 70 80 90 100 110 Ground Lead Tem perature (C) 120 Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 5 of 6 July 2005 AG302-63 InGaP HBT Gain Block Product Information AG302-63G (Green / Lead-free SOT-363 Package) Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260C reflow temperature) and leaded (maximum 245C reflow temperature) soldering processes. The plating material on the leads is annealed matte tin over copper. Outline Drawing Product Marking The component will be marked with an "I" designator followed by a two-digit numeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the "Application Notes" section. MSL / ESD Rating ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 1C Passes at 1000 V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes at 1000 V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 Land Pattern MSL Rating: Level 3 Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Thermal Specifications Parameter Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2) 10000 MTTF vs. GND Lead Temperature MTTF (million hrs) Rating -40 to +85C 325 C/W 133 C 1000 100 10 1 60 70 80 90 100 110 Ground Lead Tem perature (C) 120 1. The thermal resistance is referenced from the hottest part of the junction to the ground pin (pin 4). 2. This corresponds to the typical biasing condition of +4.23V, 35 mA at an 85C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 177 C. Specifications and information are subject to change without notice Page 6 of 6 July 2005 WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com |
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